10N60Power MOSFETUNISONICTECHNOLOGIESCO.,LTD2 of 8www.unisonic.com.twQW-R502-119.EABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)PARAMETERSYMBOLRATINGS datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET, 10N60 datasheet, 10N60 circuit, 10N60 data sheet: UTC, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Mac programs for free. UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

10N60 Datasheet PDF - Inchange Semiconductor

Part Number10N60
DescriptionN-Channel Mosfet Transistor
Manufacturers Inchange Semiconductor 
Logo

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isc N-Channel Mosfet Transistor
10N60
·Drain Current ID= 9.2A@ TC=25
: VDSS= 650V(Min)
: RDS(on) = 0.83Ω(Max)
·Fast Switching
·DESCRITION
·Designed for high efficiency switch mode power supply.
SYMBOL
VALUE
VDSS
Drain-Source Voltage
650
V
ID Drain Current-Continuous
IDM Drain Current-Single Plused
PD Total Dissipation @TC=25
Tj Max. Operating Junction Temperature 150
-55~150
SYMBOL
MAX UNIT
Rth j-a
Thermal Resistance, Junction to Ambient
62.5 /W
1 isc & iscsemi is registered trademark
www.fineprint.cn

Mosfet 10n60

Mosfet 10n60e


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1. - 600V, 10A, N-ch MOSFET
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10N60 Datasheet - 600V, 10A, N-ch MOSFET - DataSheetCafe.com


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Mosfet 10n60a

Part NumberDescriptionManufacturers
10N60The function is N-Channel Power MOSFET.
nELL
10N60The function is N-Channel Mosfet Transistor.
Inchange Semiconductor
10N60The function is 600/650 Volts N-CHANNEL POWER MOSFET.
Unisonic Technologies

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10N60 Datasheet PDF - nELL

Part Number10N60
DescriptionN-Channel Power MOSFET
Manufacturers nELL 
Logo

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10N60 Series RRooHHSS
N-Channel Power MOSFET
DESCRIPTION
device with current conduction capability
resistance, breakdown voltage rating of 600V,
They are designed for use in applications such
converters, PWM motor controls, bridge circuits
FEATURES
Ultra low gate charge(57nC max.)
(CRSS = 18pF typical)
100% avalanche energy specified
150°C operation temperature
GDS
(10N60A)
TO-220F
D
S
(10N60H)
ID (A)
RDS(ON) (Ω)
10
0.8 @ VGS = 10V
D (Drain)
(Gate)
www.nellsemi.com


TEST CIRCUITS AND WAVEFORMS (Cont.)
Nell High Power Products
VDS
RG
Pulse Width ≤ 1µs
RL
VDD
VDS
10%
td(ON)
td(OFF)
Fig.3A Gate charge test circuit
Same Type as
0.2µF
VDS
3mA
VGS
QGS
QGD
Fig.4A Unclamped lnductive switching test circuit
L
RG
D.U.T.
Fig.4B Unclamped lnductive switching
BVDSS
VDD
tp
Time
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1. - 600V, 10A, N-ch MOSFET
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Mosfet 10n60l

Mosfet
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10N60 Datasheet(PDF) - Unisonic Technologies


Featured Datasheets

Part NumberDescriptionManufacturers
10N60The function is N-Channel Power MOSFET.
nELL
10N60The function is N-Channel Mosfet Transistor.
Inchange Semiconductor
10N60The function is 600/650 Volts N-CHANNEL POWER MOSFET.
Unisonic Technologies

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